Texas Instruments (TI) has recently ramped up its gallium nitride (GaN) power semiconductor production at its factory in Aizu, Japan. This expansion, coupled with its existing GaN manufacturing in Dallas, Texas, has quadrupled TI’s internal production capacity.
Building on over a decade of expertise in GaN chip design and manufacturing, TI has successfully qualified its 200mm GaN technology for mass production. This scalable and cost-competitive manufacturing process is set to significantly boost TI’s production capabilities.
GaN-based semiconductors offer numerous advantages over traditional silicon, including higher energy efficiency, faster switching speeds, and better performance under high temperatures and voltages. These properties make GaN chips ideal for applications such as server power, solar energy generation, and AC/DC adapters.
The advanced manufacturing tools used in TI’s expanded GaN production are designed to be more efficient, using less water, energy, and raw materials. This not only enhances product performance but also contributes to environmental sustainability.
With this expansion, TI aims to manufacture more than 95% of its GaN chips internally by 2030, ensuring a reliable supply of its high-power, energy-efficient semiconductors. The company also plans to scale its GaN chips to higher voltages, starting with 900V and increasing over time.
TI’s expansion of GaN production in Japan marks a significant milestone in the semiconductor industry, promising enhanced performance, efficiency, and sustainability. As the demand for high-power, energy-efficient semiconductors continues to grow, TI is well-positioned to meet these needs with its advanced GaN technology.
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