Sanan Semiconductor, a leading wide-bandgap power semiconductor materials provider, has recently expanded its silicon carbide (SiC) portfolio by launching 1700V and 2000V devices. This move is set to enhance power efficiency in applications ranging from renewable energy to electric vehicle charging infrastructure.
1700V SiC MOSFETs: Featuring 1000mΩ on-resistance, these devices are ideal for applications requiring higher voltage margins beyond traditional 1200V devices.
1700V SiC Diodes: Available in 25A and 50A variants, these diodes offer superior performance in high-voltage systems.
2000V SiC Diodes: With a 40A version already available and a 20A version planned for release by the end of 2024, these diodes are designed for high DC link voltage systems up to 1500V DC.
2000V SiC MOSFETs: A 35mΩ version is set to be released in 2025, further expanding the high-voltage capabilities of Sanan’s SiC portfolio.
Silicon carbide technology offers numerous benefits over traditional silicon, including higher energy efficiency, faster switching speeds, and better performance under high temperatures and voltages. These properties make SiC devices ideal for a wide range of applications, such as solar string inverters, power optimizers, electric vehicle fast-charging stations, energy storage systems, and high-voltage power grids.
Sanan Semiconductor’s expansion of its SiC portfolio demonstrates its commitment to driving innovation in the power semiconductor industry. As the world transitions to cleaner energy sources and more efficient power systems, the demand for high-performance power semiconductors continues to grow.
The addition of 1700V and 2000V devices to Sanan Semiconductor’s SiC portfolio marks a significant step forward in the industry, promising enhanced power efficiency and performance in various high-voltage applications. With these new devices, Sanan is well-positioned to meet the growing demand for advanced power semiconductors and contribute to the global shift towards sustainable energy solutions.
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