Infineon Technologies AG has announced the launch of a new family of radiation-hardened Gallium Nitride (GaN) transistors, designed specifically for demanding space applications. This groundbreaking development marks a significant milestone, as these new transistors are the first of their kind to be manufactured in-house at Infineon’s own facilities and achieve the strict Defense Logistics Agency (DLA) JANS certification under the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The newly introduced GaN High Electron Mobility Transistors (HEMTs) are engineered to perform in the challenging conditions found in space, making them suitable for mission-critical applications in orbiting satellites, manned explorations, and deep-space probes. Infineon leverages over 50 years of expertise in high-reliability applications to ensure these transistors offer exceptional efficiency, thermal management, and power density. Their robust construction supports smaller, lighter, and more reliable systems, essential for modern aerospace design.
The initial variants of these radiation-hardened GaN transistors are rated for 100V and 52A, featuring an industry-leading drain-source on-resistance (R_DS(on)) of just 4 mΩ and a total gate charge (Q_g) of 8.8 nC. These specifications position them at the forefront of performance in the semiconductor market, enhancing efficiency and reducing size in application designs. The devices come housed in hermetically sealed ceramic surface mount packages, designed to withstand Single Event Effects (SEE) with a limit of 70 MeV.cm²/mg for gold ions.
Achieving the DLA JANS certification reflects Infineon’s rigorous quality control processes and commitment to reliability. This certification involves extensive screening procedures to assure the transistors meet the high-performance demands of space flight applications, solidifying Infineon’s position as a leader in the GaN segment for high-reliability applications. Infineon plans to ramp up production and is currently testing multiple lots to ensure continued manufacturing reliability before full-scale certification release.
Engineering samples and evaluation boards for the new GaN transistors are available immediately, with the final JANS-certified device set to launch in summer 2025. Infineon is also preparing to introduce additional JANS-certified components, broadening the range of voltages and currents available to customers and offering greater flexibility in the design of efficient and dependable aerospace systems.
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