Rohm Semiconductor has introduced a groundbreaking ultra-compact power MOSFET, the AW2K21, designed to meet the growing demands of fast charging in compact electronic devices like smartphones. This innovation marks a significant leap in power efficiency, space savings, and circuit protection.
Key Features of the AW2K21 MOSFET
- Ultra-Low ON-Resistance: Achieves an industry-leading 2.0 mΩ (typical) ON-resistance, minimizing power loss during high-current operation2.
- Compact Package: Housed in a 2.0 mm × 2.0 mm mold package, ideal for space-constrained designs.
- High Current Capability: Supports up to 20 A with a breakdown voltage between 28 V and 30 V, making it suitable for high-power applications.
- Bidirectional Protection: Integrates two MOSFETs in a single package to prevent reverse current flow, a critical feature for fast charging circuits2.
Technical Innovation
Rohm’s proprietary structure enhances cell density and places the drain terminal on the top surface, unlike traditional vertical trench MOS structures. This enables the use of Wafer-Level Chip Scale Packaging (WLCSP), which improves chip-to-package area ratio and further reduces ON-resistance per unit area3.
Application Benefits
- Space Efficiency: Replaces two conventional 3.3 mm × 3.3 mm MOSFETs with a single 2.0 mm × 2.0 mm unit, reducing footprint by 81% and ON-resistance by 33%3.
- Power Savings: Consumes only 1.6 W, contributing to lower energy usage in mobile and portable devices.
- Versatility: Suitable for both bidirectional and unidirectional protection in load switch applications.
Rohm is already pushing boundaries further by developing an even smaller 1.2 mm × 1.2 mm model, signaling a continued commitment to miniaturization and performance optimization in power electronics.designers the flexibility to optimize performance across various power levels and operating conditions.ality.
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