Kulim, Malaysia – August 8, 2024 – Infineon Technologies AG has officially inaugurated the first phase of its new silicon carbide (SiC) power semiconductor fab in Kulim, Malaysia. This facility is set to become the world’s largest and most efficient 200-millimeter SiC power semiconductor fab.
A Milestone in Power Semiconductor Manufacturing
The new fab represents a significant milestone in the semiconductor industry, particularly in the realm of power semiconductors. With an initial investment of two billion euros, the first phase focuses on the production of SiC power semiconductors and includes gallium nitride (GaN) epitaxy. These advanced materials are crucial for high-power applications, offering greater efficiency and enabling more compact designs.
Driving Decarbonization and Efficiency
Infineon’s new fab is a response to the growing global demand for power semiconductors driven by decarbonization efforts. SiC semiconductors are pivotal in enhancing the efficiency of electric vehicles, fast charging stations, renewable energy systems, and AI data centers. The facility operates on 100% green electricity and incorporates advanced energy efficiency and sustainable practices.
Economic and Employment Impact
The first phase of the fab is expected to create 900 high-value jobs, with the potential to expand to 4,000 jobs upon the completion of the second phase. This expansion, which involves an additional investment of up to five billion euros, will solidify the fab’s status as the largest and most efficient 200-millimeter SiC power semiconductor facility globally1.
Strategic Importance
Infineon’s CEO, Jochen Hanebeck, emphasized the strategic importance of this investment: “New generations of power semiconductors based on innovative technology such as silicon carbide are an absolute prerequisite to achieving decarbonization and climate protection. Our technology increases the energy efficiency of ubiquitous applications such as electric cars, solar and wind power systems, and AI data centers”.
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