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Infineon Introduces Groundbreaking GaN Transistors with Built-In Schottky Diodes

Infineon Technologies has raised the bar in power electronics with its latest innovation—an industrial gallium nitride (GaN) transistor family integrated with Schottky diodes. The new CoolGaN™ Transistor G5 promises to revolutionize power system design by delivering enhanced efficiency, reduced complexity, and cost savings.

The integration of a Schottky diode into GaN transistors addresses a long-standing challenge in power electronics. Traditionally, GaN-based designs have required external Schottky diodes to manage reverse conduction losses, complicating the design and increasing costs. Infineon’s CoolGaN Transistor G5 breaks this barrier by embedding the diode directly within the transistor, offering a streamlined and efficient solution.

This design innovation not only minimizes power losses but also simplifies system architecture, making it easier for engineers to develop high-performance applications. With this advancement, Infineon provides a versatile and scalable solution for a wide range of industrial uses.

Key Advantages

  • Efficiency Redefined: The integrated design minimizes dead-time losses, resulting in higher system efficiency.
  • Simplified Engineering: By reducing the need for additional components, the new transistors cut down on design complexity.
  • Cost-Effective Solutions: The elimination of external diodes lowers material costs and enhances design affordability.
  • Broad Compatibility: These transistors are engineered to work seamlessly with various controllers and gate drivers.

This groundbreaking product is ideal for applications such as server and telecom power supplies, DC-DC converters, USB-C battery chargers, and more. The first CoolGaN Transistor G5 product features a 100 V rating and a 1.5 mΩ resistance in a compact 3 x 5 mm PQFN package. Engineering samples and datasheets are now available for customers eager to explore this cutting-edge technology.

Infineon’s CoolGaN Transistor G5 signifies a new era in power electronics, pushing the boundaries of GaN technology and addressing critical industry needs. As demand for efficient and compact power solutions continues to grow, this innovation is set to make a lasting impact on industrial applications worldwide.

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