onsemi has unveiled a groundbreaking line of vertical gallium nitride (vGaN) power semiconductors built on its proprietary GaN-on-GaN technology. This innovation marks a significant leap in power electronics, promising superior performance for high-demand applications such as AI data centers, electric vehicles (EVs), renewable energy systems, and aerospace and defense sectors.
A Vertical Leap in GaN Technology
Unlike traditional lateral GaN devices that conduct current horizontally across a silicon substrate, onsemi’s new vertical GaN devices conduct current vertically through a GaN-on-GaN structure. This architecture enables:
- Higher operating voltages (up to 1,200V)
- Faster switching frequencies
- Greater power density and thermal efficiency
- Enhanced ruggedness and reliability
By leveraging a native GaN substrate, the vertical structure minimizes defects and improves thermal conductivity, allowing for more compact, lightweight, and energy-efficient systems.
The new vGaN devices are developed and manufactured at onsemi’s facility in Syracuse, New York. The company holds over 130 global patents covering its GaN process, device architecture, and packaging innovations. This robust IP portfolio underscores onsemi’s leadership in wide-bandgap semiconductors and its commitment to domestic semiconductor manufacturing.
Target Applications: From AI to EVs
The vertical GaN technology is tailored for next-generation power systems where efficiency and size are critical. Key application areas include:
- AI data centers: Reducing energy loss and cooling requirements
- Electric vehicles: Enabling smaller, lighter onboard chargers and traction inverters
- Renewable energy: Improving inverter efficiency in solar and wind systems
- Aerospace and defense: Delivering high power in compact, rugged packages
According to onsemi, early access customers are already sampling 700V and 1,200V vGaN devices, with commercial availability expected to follow.
As global energy consumption surges—driven by AI workloads, EV adoption, and electrification—power semiconductors must evolve. onsemi’s vertical GaN-on-GaN approach addresses the limitations of lateral GaN and silicon-based devices, offering a scalable path to higher efficiency and performance.ute capabilities.
Share to your social below!
