Toshiba Electronic Devices & Storage Corporation has made a significant advancement in power semiconductor technology with the shipment of early test samples of its innovative X5M007E120, a bare die 1200V silicon carbide (SiC) MOSFET. This state-of-the-art component is engineered to meet the demanding requirements of automotive traction inverters, promising lower on-resistance and enhanced reliability.
Innovative Structure: The X5M007E120 MOSFET incorporates Schottky barrier diodes (SBDs) within the MOSFET structure to deactivate body diodes, resulting in improved performance and reliability. This integration reduces the complexity of the power circuit design, leading to more efficient and compact systems.
Efficiency Enhancement: A unique check pattern array for the SBDs is employed to suppress bipolar energization, which in turn improves the limits of unipolar operation. This design innovation reduces on-resistance by approximately 20-30%, enabling more efficient power conversion and reduced energy losses.
Enhanced Durability: The deep barrier structure of the MOSFET is designed to minimize excessive current flow and leakage during short-circuit conditions. This enhancement significantly boosts the device’s durability and operational lifespan, making it ideal for high-stress environments.
The X5M007E120 is poised to revolutionize various motor control applications, particularly in the automotive sector. Its advanced features make it a perfect fit for:
Automotive Traction Inverters: Enhances the efficiency and performance of electric vehicle powertrains.
Industrial Motor Drives: Improves energy efficiency and reliability in industrial automation.
Renewable Energy Systems: Boosts performance and reduces losses in solar inverters and wind turbine converters.
Toshiba plans to provide engineering samples of the X5M007E120 in 2025, with mass production expected to commence in 2026. This timeline aligns with the increasing demand for high-efficiency, reliable power semiconductor solutions. The introduction of this advanced SiC MOSFET is expected to contribute significantly to energy efficiency improvements in various applications, supporting the global transition towards a decarbonized society.
The shipment of these early test samples marks Toshiba’s commitment to innovation and technological leadership in the power semiconductor industry. By pushing the boundaries of SiC technology, Toshiba aims to deliver solutions that not only meet but exceed the performance and reliability expectations of modern power systems.
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