Toshiba Electronic Devices & Storage Corporation has introduced two cutting-edge technologies aimed at supercharging the performance of silicon carbide (SiC) trench MOSFETs and Schottky barrier diodes—two key components in power electronics that serve critical roles in electric vehicles, industrial drives, and energy infrastructure.
At the heart of Toshiba’s SiC MOSFET innovation is the Bottom P-well, a newly added region in the device’s trench structure. This feature fine-tunes the electric field distribution near the gate oxide, significantly bolstering long-term reliability.
This subtle yet powerful enhancement results in a 20% reduction in on-resistance, translating to less power wasted as heat. It also boosts the device’s ability to tolerate voltage surges during inductive switching—vital for demanding applications where power loads fluctuate rapidly.
Toshiba’s fresh take on Schottky diodes introduces a semi-super-junction design that stacks alternating p-type and n-type regions within the drift layer. This layout levels out internal electric fields, which helps maintain lower resistance even at high temperatures.
The result: a 35% drop in on-resistance at 175°C—an impressive gain for engineers designing systems that must operate efficiently in harsh environments.
These advancements are more than just technical upgrades—they signal Toshiba’s commitment to more sustainable and energy-efficient power solutions. By enhancing the robustness and reducing losses in SiC-based devices, Toshiba is helping pave the way for greener, smarter electronics across sectors.
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