Infineon Technologies has introduced its latest advancement in silicon carbide (SiC) power devices: trench-based SiC superjunction (TSJ) technology. This innovation blends trench and superjunction designs, enhancing power density and efficiency for applications in electric vehicles, renewable energy, and industrial power systems.
Infineon has been a leader in SiC technology, applying charge-compensating principles from its CoolMOS™ lineup. The new TSJ technology significantly improves performance, offering higher current capacity, reduced on-resistance, and enhanced thermal management.
Key Advantages
The first TSJ-based products will be 1200V SiC devices in Infineon’s ID-PAK package, optimized for automotive traction inverters. These innovations provide:
- Up to 40% improvement in power density, enabling more compact system designs.
- 25% higher current capability, maintaining short-circuit robustness.
- Superior energy efficiency, minimizing cooling demands and improving reliability.
Infineon plans to expand its CoolSiC portfolio, incorporating TSJ technology into discrete components, power modules, and bare dies for diverse applications, including EV drivetrains, solar energy systems, and industrial power conversion.
Hyundai Motor Company has partnered with Infineon to explore TSJ-based solutions for its next-generation EV models, reinforcing the technology’s potential in high-performance electric mobility. The first ID-PAK 1200V samples are available for automotive manufacturers, with full-scale production expected by 2027. Infineon’s trench-based SiC superjunction technology is set to redefine power electronics, driving improvements in efficiency, compactness, and system reliability across multiple industries.
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