Infineon Unveils Thermally Optimised CoolSiC™ MOSFET 1200 V G2 in Q-DPAK Package

Infineon Technologies has announced the launch of its next-generation CoolSiC™ MOSFET 1200 V G2, housed in a top-side-cooled (TSC) Q-DPAK package. This innovation marks a significant leap in thermal performance, system efficiency, and design flexibility for demanding industrial applications such as EV chargers, solar inverters, motor drives, and solid-state circuit breakers.

The CoolSiC 1200 V G2 introduces several enhancements over its predecessor:

• Up to 25% lower switching losses for equivalent R_DS(on) values
• 15% reduction in thermal resistance
• 11% lower MOSFET operating temperature
• Supports overload operation up to 200°C junction temperature

These improvements are enabled by Infineon’s advanced .XT die attach interconnection technology, which enhances heat dissipation and reliability under dynamic conditions.

The Q-DPAK package is engineered for top-side cooling, allowing direct heat transfer from the device’s surface to the heatsink. This design:

• Improves heat transfer efficiency compared to bottom-side cooling
• Minimizes parasitic inductance for higher switching speeds
• Supports compact system layouts
• Is compatible with automated assembly for scalable manufacturing

Infineon offers the CoolSiC 1200 V G2 in two configurations:

• Single switch
• Dual half-bridge

Both are part of the broader X-DPAK platform, which features a standardized 2.3 mm package height across TSC variants (including Q-DPAK and TOLT). This allows engineers to mix and match components under a single heatsink, simplifying system design and scaling.

The CoolSiC MOSFET 1200 V G2 is tailored for:

• Electric vehicle (EV) chargers
• Solar inverters
• Uninterruptible power supplies (UPS)
• Motor drives
• Solid-state circuit breakers

Its broad R_DS(on) range (4 mΩ to 78 mΩ) gives designers the flexibility to optimize performance across various power levels and operating conditions.ality.

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