Micron Technology has recently announced the production of LPDDR5X memory, which is capable of reaching a speed of 9.6 Gbps and supporting Qualcomm’s latest flagship mobile platform Snapdragon 8 Gen 3. This memory offers the best performance and power efficiency compared to LPDDR5, LPDDR4X, and LPDDR4. It is designed for thin and light laptops and is the flagship low-power memory solution for AI applications needing high bandwidth, low latency.
Micron LPDDR5X at 9.6 Gbps provides over 12% faster peak bandwidth compared to the previous generation, which is critical for enabling rapid AI inferencing at the edge. Built on Micron’s industry-leading 1-beta process node, LPDDR5X offers a nearly 30% power improvement and the flexibility to deliver workload-customized power and performance. It is offered in capacities up to 16 gigabytes (GB).
LPDDR5X memory is validated on leading chipsets for flagship smartphones and is purpose-built for high-end and flagship smartphones. It delivers peak speeds at 8.533 gigabits per second (Gbps), which is up to 33% faster than previous-generation LPDDR5. This increased speed provides a boost for high-bandwidth, data-intensive mobile experiences that demand high-performance memory.
Micron’s LPDDR5X continues to gain market traction with its validation on the latest flagship chipset — Snapdragon® 8 Gen 2 Mobile Platform from Qualcomm. To learn more about Micron’s LPDDR5X memory, you can view their data sheet by clicking below.
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