Tessenderlo, Belgium – X-FAB Silicon Foundries SE has launched its cutting-edge XSICM03 platform, marking a significant advancement in Silicon Carbide (SiC) process technology for power MOSFET designs. This next-generation platform, part of X-FAB’s XbloX series, promises to revolutionize the efficiency and performance of power MOSFETs, particularly in high-demand applications such as automotive, industrial, and energy sectors.
The XSICM03 platform introduces a dramatically reduced cell pitch, which allows for a higher die count per wafer and enhances on-state resistance without compromising reliability. This development is set to streamline the design process, reduce risks, and significantly shorten product development timelines, providing a robust solution for creating application-optimized products.
Rico Tillner, CEO of X-FAB Texas, highlighted the platform’s advantages: “Our XSICM03 platform is designed to meet the growing demand for high-performance SiC devices in critical applications. By enabling faster prototyping and easier design evaluations, we help our customers bring products to market more quickly and efficiently.”
The platform integrates qualified SiC process development blocks and modules for planar MOSFET production, simplifying the onboarding process and reducing design risks. With active area design cell size reduction and proven process modules, the XSICM03 ensures exceptional gate oxide reliability and device robustness. The platform also features an enriched PCM library and enhanced design support, facilitating faster customer tape-outs and expediting product development.
One of the significant benefits of the XSICM03 platform is its ability to maintain robust process controls and excellent leakage and breakdown performance, even with a cell pitch that is over 25% smaller than previous generations. This allows for up to 30% more die per wafer, translating to increased production efficiency and cost-effectiveness.
The XSICM03 platform is now available for early access, offering customers a competitive edge by enabling them to create a diverse product portfolio while achieving production timelines up to nine months faster than traditional development methods.
By leveraging the XSICM03 platform, X-FAB aims to address the increasing demand for high-performance SiC devices, supporting advancements in automotive, industrial, and energy applications. This next-generation platform is poised to set new standards in the industry, driving innovation and efficiency in power MOSFET design.
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